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| inchange semiconductor product specification silicon npn power transistors 2SC1116 description ? with to-3 package ? wide area of safe operation applications ? for audio and general purpose applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 180 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 6 v i c collector current 10 a p c collector power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC1116 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ;i b =0 120 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 180 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 2.0 v i cbo collector cut-off current v cb =180v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =3a ; v ce =4v 50 f t transition frequency i c =1a ; v ce =12v 10 mhz inchange semiconductor product specification 3 silicon npn power transistors 2SC1116 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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